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| BAR50... Silicon PIN Diodes Current-controlled RF resistor for switching and attenuating applications Frequency range above 10 MHz up to 6 GHz Especially useful as antenna switch in mobile communication Very low capacitance at zero volt reverse bias at freuencies above 1 GHz (typ. 0.15 pF) Low forward resitance Very low harmonics BAR50-05 1 BAR50-02V, TS BAR50-03W, TS Junction temperature Operating temperature range Storage temperature 1 BAR50-05, TS BAR50-02L BAR50-02V BAR50-03W 3 2 D1 D2 1 2 Type BAR50-02L* BAR50-02V BAR50-03W BAR50-05* Package TSLP-2-1 SC79 SOD323 SOT23 Configuration single,leadless single single common cathode LS(nH) 0.4 0.6 1.4 1.8 Marking AB a blue A OCs * Preliminary Maximum Ratings at TA = 25C, unless otherwise specified Parameter Symbol VR IF Ptot Value Unit Diode reverse voltage Forward current Total power dissipation BAR50-02L, TS 130C 120C 116C 50 100 250 250 250 250 V mA mW 60C Tj Top Tstg 150 -55 ... 125 -55 ... 150 C Feb-04-2003 BAR50... Thermal Resistance Parameter Symbol RthJS Value Unit Junction - soldering point1) BAR50-02L BAR50-02V BAR50-03W BAR50-05 K/W 80 120 135 360 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter DC Characteristics Reverse current VR = 50 V Forward voltage IF = 50 mA 1For Symbol min. IR VF - Values typ. 0.95 max. 50 1.1 calculation of R thJA please refer to Application Note Thermal Resistance 2 Unit nA V Feb-04-2003 BAR50... Electrical Characteristics at TA = 25C, unless otherwise specified Parameter AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 5 V, f = 1 MHz VR = 0 V, f = 100 MHz VR = 0 V, f = 1...1.8 GHz, BAR50-02L VR = 0 V, f = 1...1.8 GHz, all other Reverse parallel resistance VR = 0 V, f = 100 MHz VR = 0 V, f = 1 GHz VR = 0 V, f = 1.8 GHz Forward resistance IF = 0.5 mA, f = 100 MHz IF = 1 mA, f = 100 MHz IF = 10 mA, f = 100 MHz IF = 10 mA, IR = 6 mA, measured at IR = 3 mA, I-region width Insertion loss1) IF = 3 mA, f = 1.8 GHz IF = 5 mA, f = 1.8 GHz IF = 10 mA, f = 1.8 GHz Isolation1) VR = 0 V, f = 0.9 GHz VR = 0 V, f = 1.8 GHz VR = 0 V, f = 2.45 GHz VR = 0 V, f = 5.6 GHz |S21|2 -24.5 -20 -18 -12 Charge carrier life time RL = 100 rr Symbol min. CT RP rf - Values typ. max. Unit pF 0.24 0.2 0.2 0.1 0.15 25 6 5 25 16.5 3 1100 0.5 0.4 k 40 25 4.5 ns WI |S21|2 - 56 -0.56 -0.4 -0.27 - 1BAR50-02L in series configuration, Z = 50 3 Feb-04-2003 m dB BAR50... Diode capacitance CT = f = Parameter 0.5 pF 10 3 KOhm 0.4 10 2 CT 0.35 Rp 0.3 10 1 0.25 1 MHz 100 MHz 1 GHz 1.8 GHz 10 0 0.2 100 MHz 1 GHz 1.8 GHz 0.15 10 -1 0 0.1 0 2 4 6 8 10 12 14 16 V 20 2 4 6 8 10 12 14 16 VR f = 100 MHz 10 Ohm 4 TA = Parameter 10 0 A 10 3 10 -1 10 -2 10 IF rf 2 10 -3 10 1 10 -4 10 0 10 -5 10 -1 10 -2 10 -1 10 0 10 1 mA 10 2 10 -6 0 0.2 0.4 IF 4 Forward resistance rf = (I F) Forward current IF = (VF) -40 C 25 C 85 C 125 C 0.6 0.8 V Feb-04-2003 (VR ) Reverse parallel resistance RP = (VR ) f = Parameter V 20 VR 1.2 VF BAR50... Forward current IF = BAR50-02L 120 mA 100 90 80 BAR50-02V, BAR50-03W 120 mA 100 90 80 IF 70 60 50 40 30 20 10 0 0 15 30 45 60 75 90 105 120 C 150 IF 70 60 50 40 30 20 10 0 0 15 30 45 60 75 90 105 120 C 150 TS BAR50-05 120 mA 100 90 80 BAR50-02L 10 2 mA RthJS 70 60 50 40 30 20 10 0 0 15 30 45 60 75 90 105 120 C 150 10 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 IF 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 TS 5 Feb-04-2003 Forward current IF = (TS ) Permissible Puls Load RthJS = (TS ) Forward current IF = (TS ) TS (tp ) C 10 0 tp BAR50... Permissible Pulse Load BAR50-02L 10 1 IFmax/ IFDC mA RthJS 10 0 -6 10 10 BAR50-02V 10 2 IFmax / IFDC 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 0 -6 10 10 IFmax / IFDC = (tp ) BAR50-02W 10 3 10 2 10 1 10 0 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 -5 10 -4 10 -3 10 -2 s 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 tp 6 Feb-04-2003 Permissible Pulse Load -5 IFmax / IFDC = (tp ) BAR50-02V 10 3 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 10 0 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 -4 10 -3 10 -2 C 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 tp Permissible Puls Load RthJS = Permissible Puls Load RthJS = (tp ) s 10 0 tp (tp ) s 10 0 tp BAR50... Permissible Pulse Load BAR50-02W 10 2 IFmax / IFDC 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 0 -6 10 10 BAR50-03W 10 2 IFmax / IFDC 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 0 -6 10 10 IFmax / IFDC = (tp ) BAR50-05 10 3 10 2 10 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 tp 7 Feb-04-2003 Permissible Pulse Load -5 IFmax / IFDC = (tp ) BAR50-03W 10 3 10 2 10 1 10 0 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 -4 10 -3 10 -2 s 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 tp Permissible Puls Load RthJS = Permissible Puls Load RthJS = (tp ) s 10 0 tp (tp ) s 10 0 tP BAR50... Permissible Pulse Load BAR50-05 10 2 dB Insertion loss |S21 |2 = (f) IF = Parameter 0 IFmax / IFDC |S21|2 10 1 10 0 -6 10 10 VR = Parameter 0 BAR50-02L in series configuration, Z = 50 dB |S21|2 -10 -15 -20 -25 -30 0 1 2 Isolation |S21 |2 = -5 IFmax / IFDC = (tp ) BAR50-02L in series configuration, Z = 50 -0.2 D=0 0.05 0.02 0.01 0.5 0.2 0.1 0.5 10 mA -0.3 5 mA -0.4 -0.5 -0.6 -0.7 10 -4 10 -3 10 -2 s 10 0 -0.8 0 1 2 3 tp (f) 0V 1V 10 V 3 4 GHz 6 f 8 100 mA 3 mA 4 GHz 6 f Feb-04-2003 |
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